 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| PD - 90639A REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-39) Product Summary Part Number BVDSS RDS(on) IRLF120 100V 0.35 ID 5.3A IRLF120 100V, N-CHANNEL The Logic Level `L' series of power MOSFETs are designed to be operated with level logic gate-to-source voltage of 5V. In addition to the well established characterstics of HEXFETs , they have the added advantage of providing low drive requirements to interface power loads to logic level IC's and microprocessors. Fields of applications include: high speed power applications such as switching regulators, switching converters, motor drivers, solenoid and relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gatedrive voltage. The HEXFET technology is the key to International Rectifier's advanced line of logic level power MOSFET transistors. The efficient geometry and unique processing of the HEXFET achieve very low on-state resistance combined with high transconductance and great device ruggedness. . TO-39 Features: n n n n n n n n Repetitive Avalanche Ratings Dynamic dv/dt Rating Low Drive Requirements Execellent Temperature Stability Fast Switching Speeds Ease of Paralleling Hermetically Sealed Light Weight Absolute Maximum Ratings ID @ VGS = 5.0V, TC = 25C ID @ VGS = 5.0V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Parameter Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the last page 5.3 3.4 21 20 0.16 10 120 5.3 2.0 5.5 -55 to 150 300 (0.063 in. (1.6mm) from case for 10s) 0.98(typical) Units A W W/C V mJ A mJ V/ns o C g www.irf.com 1 08/08/01 IRLF120 Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltage BV DSS/T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current Min 100 -- -- -- 1.0 3.1 -- -- -- -- -- -- -- -- -- -- -- -- Typ Max Units -- 0.13 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 7.0 -- -- 0.35 0.42 2.0 -- 250 1000 100 -100 13 2.4 7.1 13 53 30 27 -- V V/C V S( ) A Test Conditions VGS = 0V, ID = 250A Reference to 25C, ID = 250A VGS = 5.0V, ID = 3.2A VGS = 4.0V, ID = 2.7A VDS = VGS, ID = 250A VDS = 50V, IDS = 3.2A VDS= 100V, VGS=0V VDS = 80V VGS = 0V, TJ = 125C VGS = 10V VGS = -10V VGS =5.0V, ID = 5.3A VDS= 80V VDD = 50V, ID = 5.3A, VGS =5.0V, RG = 18 IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance nA nC ns nH Measured from drain lead (6mm/ 0.25in. from package) to source lead (6mm/0.25in. from package) Ciss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance -- -- -- 480 150 30 -- -- pF VGS = 0V, VDS = 25V f = 1.0MHz Source-Drain Diode Ratings and Characteristics Parameter IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min Typ Max Units -- -- -- -- -- -- -- -- -- -- 5.3 21 2.5 220 1.1 Test Conditions A V nS C Tj = 25C, IS = 5.3A, VGS = 0V Tj = 25C, IF = 5.3A, di/dt 100A/s VDD 50V Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC RthJA Junction-to-Case Junction-to-Ambient Min Typ Max Units -- -- -- -- 6.25 175 C/W Test Conditions Typical socket mount. Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page 2 www.irf.com IRLF120 Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs.Temperature www.irf.com 3 IRLF120 Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRLF120 V DS VGS RG RD D.U.T. + -V DD VGS Pulse Width 1 s Duty Factor 0.1 % Fig 10a. Switching Time Test Circuit VDS 90% Fig 9. Maximum Drain Current Vs. CaseTemperature 10% VGS td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRLF120 1 5V VD S L D R IV E R RG D .U .T IA S + - VD D A VGS 20V tp 0 .0 1 Fig 12a. Unclamped Inductive Test Circuit V (B R )D S S tp Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50K QG 12V .2F .3F 5.0 V QGS VG QGD VGS 3mA D.U.T. + V - DS Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com IRLF120 Foot Notes: Repetitive Rating; Pulse width limited by maximum junction temperature. VDD = 25 V, Starting TJ = 25C, L= 6.1mH Peak IAS = 5.3A, VGS =5.0V, RG= 25 VDD 100V, TJ 150C Suggested RG =18 Pulse width 300 s; Duty Cycle 2% ISD 5.3A, di/dt 110A/s, Case Outline and Dimensions --TO-205AF ( TO-39) LEGEND 1- SOURCE 2- GATE 3- DRAIN IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 08/01 www.irf.com 7 |
Price & Availability of IRLF120
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |